for this lecture was provided by Mr. Brower in Oct, 2000.
My involvement with the early days of the grown
junction transistor began in Feb, 1955 when I left National Union with Jay
Reese and joined Texas Instruments.
I was hired to work on a new Army Signal Corps contract to develop
silicon transistors for military use.
It was recognized that the germanium transistors then available
would not be able to perform at the high temperatures common to military
applications. TI had invented the
silicon transistor, the first of its kind, using grown junction
technology. At the time, Mark
Sheppard, later to become CEO and President, was the chief engineer and
Boyd Cornelison was in charge of production.
The silicon transistor material was grown in a
crystal-pulling machine using the Czochraski crystal growth principle. A quartz crucible filled with
polycrystalline purified silicon was enclosed in a graphite crucible that
was heated by radio frequency induced currents from a surrounding induction
Bill Brower, Page 2